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this is information on a product in full production. may 2013 docid024067 rev 2 1/13 13 STP77N6F6 n-channel 60 v, 0.0063 typ., 77 a stripfet? vi deepgate? power mosfet in a to-220 package datasheet ? production data figure 1. internal schematic diagram features ? r ds(on) * q g industry benchmark ? extremely low on-resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses ? very low switching gate charge applications ? switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. $0y * 6 '7$% to-220 1 2 3 tab order code v ds r ds(on) max i d p tot STP77N6F6 60 v 0.007 77 a 80 w table 1. device summary order code marking package packaging STP77N6F6 77n6f6 to-220 tube www.st.com
contents STP77N6F6 2/13 docid024067 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid024067 rev 2 3/13 STP77N6F6 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 60 v v gs gate-source voltage 20 v i d (1) 1. this value is rated according to r thj-c drain current (continuous) at t c = 25 c 77 a i d (1) drain current (continuous) at t c = 100 c 55 a i dm (2) 2. pulse width is limited by safe operating area drain current (pulsed) 308 a p tot (1) total dissipation at t c = 25 c 80 w t j pstg operating junction temperature storage temperature -55 to 175 c table 3. thermal data symbol parameter value unit r thj-c thermal resistance junction-case 1.88 c/w r thj-a (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu, t < 10 sec thermal resistance junction-ambient 62.5 table 4. avalanche characteristics symbol parameter value unit i av avalanche current, repetitive or not-repetitive (pulse width limited by maximum junction temperature) 38.5 a e as s i n g l e p u l s e a v a l a n c h e e n e r g y (t j = 25 c, i d = i av , v dd = 43 v) 152 mj
electrical characteristics STP77N6F6 4/13 docid024067 rev 2 2 electrical characteristics (t j = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current v ds = 60 v, v gs = 0 10 a v ds = 60 v, v gs = 0, t j =125 c 100 a i gss gate-body leakage current v gs = 20 v, v ds = 0 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 38.5 a 0.0063 0.007 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 4295 - pf c oss output capacitance - 292 - pf c rss reverse transfer capacitance -190-pf q g total gate charge v dd = 30 v, i d = 77 a, v gs = 10 v - 70.5 - nc q gs gate-source charge - 19.7 - nc q gd gate-drain charge - 16.2 - nc r g intrinsic gate resistance f = 1 mhz open drain - 2.2 - table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 30 v, i d = 77 a r g =4.7 v gs = 10 v -22-ns t r rise time - 42 - ns t d(off) turn-off-delay time - 73 - ns t f fall time - 16 - ns
docid024067 rev 2 5/13 STP77N6F6 electrical characteristics table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 77 a i sdm (1) 1. pulse width is limited by safe operating area source-drain current (pulsed) - 308 a v sd (2) 2. pulse test: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 77 a, v gs = 0 - 1.3 v t rr reverse recovery time i sd = 77 a, v dd = 48 v di/dt = 100 a/s, t j = 25 c -49 ns q rr reverse recovery charge - 8.5 nc i rrm reverse recovery current - 0.3 a
electrical characteristics STP77N6F6 6/13 docid024067 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 100 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms tj=175c tc=25c single pulse am15844v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 200 100 0 0 4 v ds (v) (a) 2 4v v gs =7, 8, 9, 10, 11v 50 150 250 5v 6v 6 300 am15845v1 i d 200 100 0 2 4 v gs (v) 6 (a) 3 5 7 50 150 250 v ds =5 v 8 9 10 300 am15846v1 v gs 6 4 2 0 0 20 q g (nc) (v) 80 8 40 60 10 12 v dd =30v i d =77a am15847v1 r ds(on) 6.0 4.0 2.0 0.0 0 40 i d (a) (m ) 8.0 v gs =10v 60 20 10.0 12.0 14.0 am15848v1
docid024067 rev 2 7/13 STP77N6F6 electrical characteristics figure 8. capacitance variations figure 9. normalized gate threshold voltage vs. temperature figure 10. normalized on-resistance vs. temperature figure 11. drain-source diode forward characteristics figure 12. normalized v ds vs. temperature c 1000 100 0.1 10 v ds (v) (pf) 1 ciss coss crss am15849v1 v gs(th) 0.6 0.4 0.2 0 -50 -25 t j (c) (norm) 0 25 i d =250a 50 75 100 125 0.8 1 1.2 am15850v1 r ds(on) 2 1 0 -50 -25 t j (c) (norm) 0 25 0.5 1.5 v gs =10v i d =38.5 a 75 100 125 150 am15851v1 v sd 0 20 i sd (a) (v) 10 30 40 0.5 0.6 0.7 0.8 0.9 t j =-50c t j =150c t j =25c 50 60 1 am15852v1 v ds -50 -25 t j (c) (norm) 0 0.9 0.95 1 1.05 1.1 75 50 100 125 25 i d =250a am15853v1
test circuits STP77N6F6 8/13 docid024067 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid024067 rev 2 9/13 STP77N6F6 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STP77N6F6 10/13 docid024067 rev 2 table 9. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid024067 rev 2 11/13 STP77N6F6 package mechanical data figure 19. to-220 type a drawing 0015988_typea_rev_s
revision history STP77N6F6 12/13 docid024067 rev 2 5 revision history table 10. document revision history date revision changes 12-dec-2012 1 first release. 23-may-2013 2 ? updated: values in table 4 , the entire values in table 6 , 7 , v dd and t j values in table 8 , typical values for t rr , q rr , i rrm in table 8 ? added: v sd max value in table 8 ? added: section 2.1: electrical characteristics (curves) ? minor text changes
docid024067 rev 2 13/13 STP77N6F6 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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